Reduction of switching field distributions by edge oxidization of submicron magnetoresistive tunneling junction cells for high-density magnetoresistive random access memories

Abstract

An edge oxidization effect on magnetization reversals is investigated for submicron-patterned magnetoresistive tunneling junctions (MTJs). By the MTJ edge oxidization which causes the MTJ edge saturation magnetization (Ms) reduction, the switching field distributions (SFDs) for 0.24×0.48μm2 MTJs are reduced to less than 10%. The offset fields and the kinks in resistance-magnetic-field curves are reduced. Micromagnetic simulation results predict that the edge magnetization reversals are suppressed by the MTJ edge Ms reduction and the edge domain size at the remanent states becomes small. Consequently, the edge domain motion suppression by the edge oxidization is effective for decreasing the SFDs.