Publication | Closed Access
Comparative study of quasi-static and normal capacitance–voltage characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors
20
Citations
9
References
2010
Year
Materials ScienceDevice ModelingElectrical EngineeringEngineeringOxide ElectronicsApplied PhysicsNormal Capacitance–voltage CharacteristicsThin Film Process TechnologyThin FilmsComparative StudyThin Film ProcessingSemiconductor Device
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