Applied Physics Letters · 1987 · 31 citations · 7 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesChemical Vapor DepositionLaser PhysicsOptical SourcesQuantum OptoelectronicsQuantum WellsSemiconductor LasersBarrier LayersLaser Gain MaterialsQuantum Well GrowthQuantum Well Growth TechniquesQuantum Well HeterostructuresQuantum Well LasersQuantum Well StructuresSemiconductor Laser Fabrication
Room-temperature continuous-wave (cw) operation of a GaInP/AlGaInP multiquantum well (MQW) laser was achieved for the first time. The threshold current was 70 mA at 22 °C for a device with an 8-μm-wide and a 250-μm-long planar stripe. The emission wavelength was 668 nm. The characteristic temperature T0 was 138 K under cw operation. The wafer with the MQW structure composed of 100-Å-thick GaInP wells and 40-Å-thick AlGaInP barrier layers was grown by atmospheric pressure metalorganic chemical vapor deposition.
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Quantum-well heterostructure lasers
N. Holonyak, R. M. Kolbas, Russell D. Dupuis et al. · IEEE Journal of Quantum Electronics · 1980 · 545 citations
Masayuki Ishikawa, Yasuo Ohba, Hideto Sugawara et al. · Applied Physics Letters · 1986 · 192 citations
Room-temperature CW operation of AlGaInP double-heterostructure visible lasers
K. Kobayashi, S. Kawata, Akiko Gomyo et al. · Electronics Letters · 1985 · 158 citations
Masao Ikeda, Yoshifumi Mori, Hiromitsu Sato et al. · Applied Physics Letters · 1985 · 131 citations