A millimeter-wave capable SiGe BiCMOS process with 270GHz FMAX HBTs designed for high volume manufacturing

Abstract

A new SiGe BiCMOS process, SBC18H3 is described which features SiGe HBTs with 240GHz F <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> and 270 GHz F <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> . The HBT devices are described in detail along with several other mm-wave components included in the process. The process is based on a high-volume manufacturing-proven 0.18um SiGe BiCMOS base platform which has been running at TowerJazz for almost a decade and has been used to produce over 100,000 8" wafers. Additional mm-wave enablement devices offered in the process include MOS varactors, P-I-N diodes and sub-10fF MIM capacitors. Additional key metrics for the SiGe HBT device include an NF <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MIN</sub> of 2dB at 40GHz, a BV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CEO</sub> of 1.6V and a DC current gain of 1200.