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Diffusion of Boron, Phosphorus, Arsenic, and Antimony in Thermally Grown Silicon Dioxide
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1999
Year
Materials EngineeringChemical EngineeringIon ImplantationEngineeringDopant ImpuritiesIntrinsic ImpurityApplied PhysicsCondensed Matter PhysicsAnalytical ChemistrySemiconductor MaterialProcess SimulatorAnomalous DiffusionChemistryAmorphous SolidSilicon On InsulatorIon EmissionIon ProcessElectrochemistry
We studied the diffusion of dopant impurities, that is, ion‐implanted boron, phosphorous, arsenic, and antimony in and determined the diffusivity of the impurities in using secondary ion mass spectrometry and a process simulator. We also revealed anomalous diffusion of the dopant impurities in . © 1999 The Electrochemical Society. All rights reserved.