Rearrangement of misfit dislocations in GaAs on Si by post-growth annealing - Concepedia

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Rearrangement of misfit dislocations in GaAs on Si by post-growth annealing

10

Citations

5

References

1995

Year

M. Tamura, Tokuo Yodo, T. Saitoh, J. E. Palmer

Journal of Crystal Growth

EngineeringMisfit DislocationsPhysicsDislocation InteractionApplied PhysicsDefect FormationSemiconductor Device FabricationOptoelectronicsCompound SemiconductorPost-growth Annealing

References

	Year	Citations

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