Reflection high-energy electron diffraction observations during growth of ZnS<i>x</i>Se1−<i>x</i>(0≤<i>x</i>≤1) by molecular-beam epitaxy

Abstract

Different surface reconstructions were observed during growth of ZnSxSe1−x(0≤x≤1) and the growth conditions under which these occur were determined. Zn-rich ZnSe growth shows a c(2×2) surface reconstruction, while under Se-rich growth a (2×1) surface is observed. On ZnSxSe1−x(x≤0.16) and on ZnSe/ZnSxSe1−x superlattice structures a (5×) reconstruction is observed. Se desorption experiments suggest that Se is bound as a dimer to a Se stabilized ZnSxSe1−x surface. The intensity of the specular beam increases after switching from molecular-beam epitaxy growth of ZnSe to atomic layer epitaxy growth. Implications on the ZnSe growth mechanism are discussed.