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Materials characteristics of pseudomorphic high electron mobility transistor structures with InxGa1−xas single quantum well and GaAs-InxGa1−xas (0.25 < x < 0.4) thin strained superlattice active layers

Materials ScienceSemiconductor TechnologyElectrical EngineeringEngineeringActive LayersInxga1−xas Single QuantumApplied PhysicsQuantum MaterialsMaterials CharacteristicsSemiconductor Device