Ammonothermal GaN substrates: Growth accomplishments and applications

Abstract

Abstract We are presenting some physical and chemical basis of ammonothermal method of bulk gallium nitride (GaN) synthesis in ammonobasic route. The substrates of polar, non‐polar, and semi‐polar orientation can be obtained by this method. Excellent structural and wide spectrum of electrical parameters of truly bulk GaN crystals obtained this way are revealed. Large progress in manufacturing of large size (1‐in.) non‐polar ammonothermal crystals is reported. A preliminary results on performance of the devices grown on ammonothermal GaN substrates will be shown.