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A comprehensive study of flicker noise in plasma nitrided SiON p-MOSFETs: process dependence of pre-existing and NBTI stress generated trap distribution profiles
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2008
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Electrical EngineeringEngineeringPhysicsStress-induced Leakage CurrentElectronic EngineeringBias Temperature InstabilityApplied PhysicsTrap Distribution ProfilesTime-dependent Dielectric BreakdownNoiseFlicker NoiseNbti StressN Density DistributionMicroelectronicsSemiconductor Device
Flicker noise is studied in SiON p-MOSFETs before and after NBTI stress. Pre-stress noise magnitude and slope are correlated and used to verify N density distribution in gate dielectric. Post-stress noise magnitude and slope are used to explore distribution of trap generation during NBTI stress, and independently verified by using MFCP measurements. Consequence of N distribution (in SiON) on NBTI stress and recovery results is shown.