Low threshold PbEuSeTe/PbTe separate confinement buried heterostructure diode lasers

Abstract

Continuous wave (cw) operating temperature of 223 K was achieved with molecular beam epitaxy grown separate confinement buried heterostructure (SCBH) PbTe diode lasers with PbEuSeTe electrical and optical confinement layers. This is the highest cw operating temperature reported for midinfrared diode lasers. The active region of the SCBH diode lasers varies laterally to form a crescent-shaped waveguide with a maximum thickness of 0.15 μm and a lateral width of 2 μm. Exceptionally low threshold currents of 102 mA at 200 K, 166 mA at 210 K, and 249 mA at 215 K were measured.