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High contrast, submilliwatt power InGaAs/GaAs strained-layer multiple-quantum-well asymmetric reflection modulator
19
Citations
10
References
1991
Year
PhotonicsElectrical EngineeringEngineeringRf SemiconductorNonlinear OpticsOptical PropertiesNon-linear OpticQuantum DeviceApplied PhysicsHigh ContrastNonlinear SpacerOptical CommunicationQuantum Photonic DeviceMicroelectronicsElectro-optics DeviceOptoelectronicsExciton PeakOptical Amplifier
A high contrast, low power optical reflection modulator with an InGaAs/GaAs strained-layer multiple quantum well (MQW) nonlinear spacer is demonstrated. Taking advantage of large absorptive and dispersive nonlinearities near the exciton peak, on/off contrast ratios exceeding 29 dB are achieved with submilliwatt pump powers at room temperature.
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