Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors

Abstract

High performance single-walled carbon nanotube field effect transistors (SWCNT-FETs) fabricated with thin atomic layer deposited (ALD) Al2O3 as gate dielectrics and passivation layer are demonstrated. A 1.5μm gate-length SWCNT-FETs with 15nm thick Al2O3 insulator shows a gate leakage current below 10−11A at −2.5V<Vg<+7V, a subthreshold swing of S∼105mV∕decade, and a maximum on current of −12μA at a reverse gate bias of −1V. Lack of hysteresis in IV characteristics and low low frequency noise indicate high quality oxide-nanotube interface achieved utilizing ALD Al2O3 as gate dielectrics and passivation layer.