MOS-Type Micro-Oxygen Sensor Using LaF₃ Workable at Room Temperature

Abstract

A sputtered LaF 3 film was applied to construct a semiconductor micro-oxygen sensor consisting of a Pt/LaF 3 /SiO 2 /n-Si/Al structure. The sensor showed a stable response in the oxygen partial pressure range of 0.1–1.0 atm at ambient temperature. The sensitivity and response time strongly depended on the fabrication conditions of LaF 3 and Pt films, and the optimum sputtering conditions to prepare the films were investigated. It was also demonstrated that water vapor treatment was effective in improving the response rate and the response reversibility.