Physical Review · 1968 · 82 citations · 16 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsCarrier TransportElectron-phonon InteractionsElectronic Band StructureOptical Properties Of SemiconductorsSemiconductor PhysicsWide Band Gap SemiconductorsAvalanche BreakdownCarrier Drift VelocityCarrier Transport In SemiconductorsCarrier Transport MechanismsCharge Carrier Drift VelocityElectrical Transport PropertiesNon-ohmic MaterialsTransport In Semiconductors
Hot-electron distribution functions, occupation densities, and drift velocities are calculated for InAs and InSb at room temperature, on the assumption that there are polar-optical-phonon interactions only. Exact energy-momentum dispersion and wave functions are taken into account. The distribution function and occupation density are compared with calculations based on an electron-temperature model in parabolic bands. These calculations give essentially the same result for the average energy prior to collective breakdown, but a rather different shape for the distribution function. The drift velocity, as calculated here, remains a linear function of the field up to fields well above avalanche breakdown. This behavior seems to be confirmed by experiment.
16
Band structure of indium antimonide
E. O. Kane · Journal of Physics and Chemistry of Solids · 1957 · 3.7K citations
Hannelore Ehrenreich · Journal of Physics and Chemistry of Solids · 1957 · 477 citations
Robert F. Cotellessa · Proceedings of the IEEE · 1965 · 204 citations