The Role of Hydrogen Radicals in the Growth of a-Si and Related Alloys

Abstract

A new method of the preparation of a-Si and its alloys is proposed. The role of atomic hydrogen in the growth of a-Si:H:(F) films by the glow-discharge of a mixture of SiF 4 and H 2 is clarified. Amorphous Si:H:(F) films have been prepared in a plasma-free environment by employing long-lifetime radicals, i.e., atomic hydrogen and SiF n radicals. Highly photoconductive a-Si:H:(F) films and related alloys, viz. a-SiGe x :H:(F) and a-SiC x :H:(F), have been obtained at high deposition rates with the result that each radical is controlled independently.