The regulation of defect concentrations by means of separation layer in wide-band II-VI compounds

T.V. Butkhuzi, M M Sharvashidze, N M Gamkrelidze, Kh V Gelovani, T. G. Khulordava, N. Kekelidze, E Kekelidze

Semiconductor Science and Technology · 2001 · 16 citations · 3 references

Concepts

Abstract

The inversion of conductivity in II-VI binary compounds is possible by separating layers (gold and semiconducting layers). P-type (ZnS) and high ohmic n-type (ZnO) samples are obtained by using a gold separating layer. By using a semiconducting ZnO layer as the separating layer it is possible to regulate the relative concentration of components in the base crystal of newly grown layers. This made it possible to obtain stoichiometric n-type and also p-type ZnO and ZnS monocrystal layers.

References

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