Electronics Letters · 1991 · 17 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesQuantum Well DevicesQuantum WellsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsBandwidthHeterostructure LasersModulation BandwidthQuantum Well HeterostructuresQuantum Well LasersQuantum Well StructuresStrain EffectsStrained Quantum Wells
A zero-net-strain MQW wafer has been grown. The structure consisted of 16 In0.67Ga0.33As wells with 15 InGaAsP (λg = 1.3μm) negatively mismatched barriers. Short buried heterostructure lasers exhibited low CW threshold currents and high output powers. RIN measurements imply a maximum 3 dB modulation bandwidth of 38 GHz.
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Critical layer thickness in strained Ga1−<i>x</i>In<i>x</i>As/InP quantum wells
H. Temkin, D. Gershoni, S. N. G. Chu et al. · Applied Physics Letters · 1989 · 88 citations