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SEGR response of a radiation-hardened power MOSFET technology
20
Citations
5
References
1996
Year
Device ModelingElectrical EngineeringEngineeringSegr Response CurvesChannel ConductivityRadiation-hardened Power MosfetsElectronic EngineeringBias Temperature InstabilityPower DevicePower Semiconductor DeviceComputer EngineeringPower ElectronicsElectronic PackagingMicroelectronicsSegr ResponseElectromagnetic Compatibility
SEGR response curves are presented for eighteen different device types of radiation-hardened power MOSFETs. Comparisons are made to demonstrate the technology's insensitivity to die size, rated blocking voltage, channel conductivity, and temperature. From this data, SEGR cross-sectional area curves are inferred.
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