Process design using two-dimensional process and device simulators

Abstract

A novel two-dimensional (2D) process simulator has been developed which can handle local oxidation, implantation through arbitrary mask edges, nonplanar surfaces, and high concentration diffusion. Through coupling of 2D process and device simulators, the sensitivity of perimeter junction capacitance and breakdown voltage to variations in boron channel-stop implantation dose and local oxidation time has been simulated for a standard NMOS technology. Experimental results using test structures have confirmed the simulations. It is shown that simple power-law dependencies as a function of the process variables give good agreement with the data.