Publication | Open Access
Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition
15
Citations
22
References
2014
Year
Materials EngineeringMaterials ScienceEngineeringApplied PhysicsGe IncorporationSemiconductor Device FabricationMolecular Beam EpitaxyEpitaxial GrowthChemical Vapor DepositionCarbideHomoepitaxial Growth
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