Concepedia

Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition

Kassem Alassaad, Véronique Soulière, François Cauwet, Hervé Peyre, Davy Carole, Paweł Kwaśnicki, Sandrine Juillaguet, Thomas Kups, J. Pezoldt, Gabriel Ferro

Acta Materialia · 2014 · 15 citations · 22 references

Open access

Concepts

Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsChemical Vapor DepositionDopingEpitaxial GrowthSemiconductor HeterostructuresSemiconductor PhysicsSilicon MaterialsChemical Vapor Deposition PrecursorsEpitaxial Growth KineticsHomoepitaxial GrowthSilicon CarbideSilicon Carbide (Sic) MaterialsSilicon Carbide Crystal GrowthSilicon Chemical Vapor Deposition

References

22

Raman Investigation of SiC Polytypes

Satοru Nakashima, Hisatomo Harima · physica status solidi (a) · 1997 · 916 citations

Natural Sciences, Materials Science, Physics +17

Formation of extended defects in 4H‐SiC epitaxial growth and development of a fast growth technique

Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata et al. · physica status solidi (b) · 2009 · 167 citations

Engineering, Materials Engineering, Materials Science +17

Raman scattering from Ge nanostructures grown on Si substrates: Power and limitations

Alexander V. Kolobov · Journal of Applied Physics · 2000 · 131 citations

Natural Sciences, Materials Science, Physics +14

4H SiC Epitaxial Growth with Chlorine Addition

G. Galvagno, G. Fóti, Marco Mauceri et al. · Chemical Vapor Deposition · 2006 · 89 citations

Engineering, Electrical Engineering, Materials Science +17

Nitrogen doping of epitaxial silicon carbide

Urban Forsberg, Örjan Danielsson, Anne Henry et al. · Journal of Crystal Growth · 2002 · 79 citations

Engineering, Materials Engineering, Materials Science +12