Stabilization of Manufacturing Process of CIGS Solar Cell with Treatment of CIGS Surface by In and S Containing Solution

Abstract

CuInSe 2 (CIS) single crystal was treated in a solution containing 0.005M InCl 3 and 0.1M thioacetamide. Transmission electron microscopy with micro region chemical composition analyses and electron diffraction analyses of the cross-sectional CuInSe 2 single crystal revealed the formation of a CuInS 2 layer on the CuInSe 2 single crystal. Cu(In,Ga)Se 2 (CIGS) solar cells applied the surface modification showed little dispersion of cell performance and solar cells with high performance were obtained reproducibly.