Properties of very low temperature plasma deposited silicon nitride films

Abstract

Plasma enhanced deposition of silicon nitride films is shown to have less N–H bonds and provide better heat resistance using SiH4–N2 than SiH4–NH3–N2 plasmas at 100 °C. Properties of silicon nitride using SiH4–N2 plasma are studied versus various deposition parameters such as radio frequency power, silane flow ratio, and deposition pressure. The experimental data indicate that the deposition process at 100 °C has a N2-reaction-controlled mechanism.