Electrical investigations on metal/ferroelectric/insulator/semiconductor structures using poly[vinylidene fluoride trifluoroethylene] as ferroelectric layer for organic nonvolatile memory applications

Abstract

Poly[vinylidene fluoride trifluoroethylene] (P[VDF/TrFE]) is a ferroelectric polymer and a candidate for the application in a ferroelectric field effect transistor, which is considered as a nonvolatile and nondestructive readout memory cell. In this contribution the authors focus on metal/ferroelectric/insulator/semiconductor capacitor structures with P[VDF/TrFE] as ferroelectric layer. Measuring the capacitance of Al/P[VDF/TrFE]/SiO2/Si stacks in dependence of the applied bias and analyzing the oxide capacitance in dependence of the thickness of the ferroelectric layer, they observe a formation of an interfacial nonferroelectric layer. This layer is responsible for reduced values of polarization profound for thinner P[VDF/TrFE] layers in this system. Capacitance-time measurements at such stacks show the possibility to distinguish between a higher and a lower capacitance state for more than 5 days. Long-time measurements revealed imprint and fatigue-like behavior.