Thermodynamic analysis of the molecular beam epitaxy of AlInAs alloys

GaAs, AlAs, and Al<i>x</i>Ga1−<i>x</i>As: Material parameters for use in research and device applications

Sadao Adachi · Journal of Applied Physics · 1985 · 3.2K citations

Materials Engineering, Semiconductors, Materials Science +15

Calculation of critical layer thickness versus lattice mismatch for Ge<i>x</i>Si1−<i>x</i>/Si strained-layer heterostructures

R. People, J. C. Bean · Applied Physics Letters · 1985 · 1.7K citations

Engineering, Severe Plastic Deformation, Energy Balance +20

The Molecular Theory of Solutions.

Frank P. Buff · Journal of the American Chemical Society · 1958 · 1K citations

Engineering, Altmetric Attention Score, Molecular Biology +16

Dynamics of film growth of GaAs by MBE from Rheed observations

J.H. Neave, B.A. Joyce, Peter J. Dobson et al. · Applied Physics A · 1983 · 955 citations

Ii-vi Semiconductor, Engineering, Physics +8

Determination of the lattice constant of epitaxial layers of III-V compounds

J. Hornstra, W. Bartels · Journal of Crystal Growth · 1978 · 492 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +10