IEEE Transactions on Electron Devices · 1973 · 43 citations · 2 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesMicrowave Integrated CircuitsMicrowave Noise AnalysisMicrowave Semiconductor DevicesNoise In Electronic DevicesNoise In Semiconductor DevicesScattering ParametersLinear Two-port NetworksMicrowave Two-port AnalysisNoise Parameter ExtractionNoise ParametersScattering Parameter Analysis
Transformation formulas for the four noise parameters are given as a function of the four scattering parameters. For example, the influence of the lead inductances of a microwave bipolar transistor is examined, showing new significant results. The described procedure is applicable to other semiconductor devices. Most of the general formulas in Section II are believed to be new.
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