The Journal of Chemical Physics · 1959 · 342 citations · 9 references
Natural SciencesChemistryMaterials ScienceMaterials ChemistryPhysical ChemistrySolid-state ChemistryHigh-pressure ThermodynamicsHigh-temperature MaterialsPhase DiagramsSilicon MaterialsHigh-pressure ExperimentsHigh-temperature ExperimentsPeritectic EquilibriaPeritectic Phase DiagramPhase Diagram ConstructionSilicon CarbideSilicon Carbide (Sic) MaterialsSolubility
The solubility of carbon in silicon has been measured over the temperature range 1560 to 2900°C. The enthalpy of solution is 59±3 kcal/mole. A phase diagram for the system Si–C is presented, embodying these solubility data as well as the results of other high-temperature experiments with silicon carbide. It is found that SiC possesses a peritectic point at 2830±40°C. These studies were carried out in argon at pressures as high as 35 atmos. Solubilities of carbon in germanium were measured in the temperature range 2780 to 3170°C, at argon pressures up to 55 atmos, and a tentative phase diagram is given.
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Max Hansen, K. Anderko, H. W. Salzberg · Journal of The Electrochemical Society · 1958 · 14.8K citations
Silicon Crystals Free of Dislocations
W. C. Dash · Journal of Applied Physics · 1958 · 129 citations
Electrical Contacts to Silicon Carbide
R. N. Hall · Journal of Applied Physics · 1958 · 78 citations