High DC sensitivity of VO<i>_x</i>bolometer thin films on Si₃N₄/SiO₂membranes fabricated by metal–organic decomposition

Abstract

Well axis-oriented V2O5 thin films were fabricated on Si3N4/SiO2/Si substrates by metal–organic decomposition (MOD). These films were reduced to VOx films by heat treatment, and the films had temperature coefficient of resistances (TCRs) of 3.2–3.7%/K at 300 K. Then VOx thin film on Si3N4/SiO2 membranes was realized by wet etching of the backside of the Si substrates using a 26 wt % KOH solution. The VOx thin film on Si3N4/SiO2 membrane had a high DC sensitivity of 6130 W−1, which was over 10 times higher than that of the film on the Si3N4/SiO2/Si substrate.