Reaction layer formation at the interface between Ti or Zr and AlN

Abstract

Pure AlN substrate was prepared by hot-pressing to eliminate the influence of sintering-aid substances on interface reactions. Thin films of Ti or Zr were deposited on pure AlN substrate by e-gun evaporation. Thermally induced solid-state reactions of the metal films with the AlN substrate were investigated by Rutherford backscattering spectrometry (RBS) and X-ray diffraction (XRD). TiAl3, TiN, and Ti4N3-x, including Ti2N, were formed at the Ti/AlN interface in the temperature range of 600 to 800 °C. Only aluminides, including ZrAl3 and ZrAl2, were formed at the Zr/AlN interface at temperatures above 300 °C. Both Ti and Zr reacted with AlN to give a laminate structure and aluminides were formed adjacent to AlN.