TEM observation of dislocation loops correlated with individual swirl defects in as-grown silicon

L. I. Bernewitz, Bernd O. Kolbesen, K. R. Mayer, G. E. Schuh

Applied Physics Letters · 1974 · 48 citations · 2 references

Concepts

Abstract

Swirl defects in as-grown silicon single crystals could be observed directly in a transmission electron microscope after application of a special sample preparation method. Complicated dislocation loops were found at positions of individual swirl defects which had been revealed as hillocks rather than as etch pits by a modified Sirtl etch.

References

2