Spatial variations in oxygen precipitation in silicon after high temperature rapid thermal annealing

Abstract

Spatial variations of oxygen precipitation have been studied in silicon wafers submitted to rapid thermal annealing (RTA) in nitrogen ambients at a temperature above 1150 °C prior to a two-step precipitation treatment. The samples submitted to high temperature preannealing show a consistent enhancement of oxygen precipitation, which is dependent on the RTA time and temperature. Oxygen precipitate density measurements show that oxygen precipitation is not homogeneous inside the wafer, but peaks near the surfaces, with a minimum in the bulk. The high treatment in N2 results in the formation of defects which act as precursors for the subsequent nucleation and growth of oxygen precipitates. There is strong evidence that these precursors are generated by the thermal nitridation of the silicon surface and subsequent vacancy injection into the bulk of the wafer.