Growth of TlGaAs by low-temperature molecular-beam epitaxy

Native point defects in low-temperature-grown GaAs

X. Liu, Amrita Prasad, Johji Nishio et al. · Applied Physics Letters · 1995 · 254 citations

Natural Sciences, Materials Science, Physics +17

InTlP — a proposed infrared detector material

Mark van Schilfgaarde, An-Ban Chen, Srini Krishnamurthy et al. · Applied Physics Letters · 1994 · 91 citations

Natural Sciences, Materials Science, Physics +12

Gas source molecular beam epitaxy growth of TlInP for new infrared optical devices

Kazuhiko Yamamoto, H. Asahi, M. Fushida et al. · Journal of Applied Physics · 1997 · 38 citations

Natural Sciences, Materials Engineering, Materials Science +17

X-Ray Diffraction Measurements on Lattice Mismatch of InTlAs Grown on InAs Substrates

Yasutomo Kajikawa, Shuuichi Asahina, Nobuyuki Kanayama · Japanese Journal of Applied Physics · 2001 · 16 citations

Natural Sciences, Materials Engineering, Materials Science +14

A proposed TlGaAs/AlGaAs pseudomorphic heterostructure field effect transistor

Stefan P. Svensson, F. J. Crowne · Journal of Applied Physics · 1998 · 11 citations

Engineering, Electrical Engineering, Materials Science +17