Japanese Journal of Applied Physics · 1990 · 30 citations · 16 references
EngineeringElectrical EngineeringPhysicsOptoelectronicsSemiconductor DevicesSemiconductor MaterialsQuantum ConfinementQuantum DotsQuantum OptoelectronicsQuantum WellsSemiconductor PhysicsStark EffectBand GapElectronic Band GapMolecular Beam EpitaxyOptical Absorption In Quantum WellsPhotocurrent GenerationQuantum Confined Stark EffectQuantum Well Band StructureQuantum Well Growth
A multi-quantum well pin diode which contains quantum wells where the band gap changes in a steplike manner along the growth direction has been grown by molecular beam epitaxy. The quantum-confined Stark effect has been observed by photocurrent spectroscopy at room temperature, and a larger red shift of the lowest exciton absorption peak in comparison with the conventional rectangular-shaped quantum well has been observed under a considerably large amount of applied electric field.
16
Anthony L. Lentine, H.S. Hinton, David A. B. Miller et al. · IEEE Journal of Quantum Electronics · 1989 · 238 citations
Engineering, Computer Engineering, Electrical Engineering +17