Electronic structure of an isolated GaAs-GaAlAs quantum well in a strong electric field

Abstract

An exact numerical calculation for an isolated quantum well of a GaAs-GaAlAs system subjected to an external electric field is presented. Resonance positions and widths, and density-of-states profiles are reported for a 30-\AA{} well to demonstrate that the rigorous description of the high-field states as resonances leads to qualitatively new phenomena. In particular, in fields of 4\ifmmode\times\else\texttimes\fi{}${10}^{5}$ V ${\mathrm{cm}}^{\ensuremath{-}1}$ the effective hole energy shift is reduced to zero and a new antiresonance state emerges from the continuum into the well.