Comparative study of etching high crystalline quality AlN and GaN

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

M. Asif Khan, X. Hu, Ahmad Tarakji et al. · Applied Physics Letters · 2000 · 355 citations

Engineering, Electrical Engineering, Materials Science +17

Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy

Dongsheng Li, Masatomo Sumiya, Shunro Fuke et al. · Journal of Applied Physics · 2001 · 354 citations

Natural Sciences, Materials Engineering, Materials Science +17

Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off

William S. Wong, T. Sands, N.W. Cheung et al. · Applied Physics Letters · 1999 · 347 citations

Engineering, Electrical Engineering, Materials Science +17

Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire

D. Kapolnek, X. H. Wu, B. Heying et al. · Applied Physics Letters · 1995 · 319 citations

Natural Sciences, Materials Engineering, Materials Science +17

Experiments on plants grown in space. Status and prospects.

Thora W. Halstead, F. R. Dutcher · PubMed · 1984 · 255 citations

Agriculture, Plant Biology, Plant Sciences +13