THE DENSITY OF STATES IN METAL-SEMICONDUCTOR TUNNELING

Abstract

A new method is suggested for analyzing the tunneling data from metal-semiconductor (Schottky) junctions, and the method is appled to p-type GaAs. The method allows a determination of the argument of the tunneling integral. The results indicate that the tunneling current depends upon the density of states of the semiconductor. This disagrees with Harrison's WKBJ results, but does agree with the recent exact solution of tunneling in Schottky junctions.