Tailoring the dielectric properties of HfO2–Ta2O5 nanolaminates

Abstract

Dielectric thin films applicable, for instance, as insulating layers in electroluminescent display devices have been studied. In order to improve dielectric characteristics HfO2–Ta2O5 nanolaminates were prepared by atomic layer epitaxy at 325 °C. The nanolaminates were evaluated in capacitance and current–voltage measurements. By optimizing the layer thicknesses in the nanolaminate structures the dielectric properties, especially leakage current densities, could be tailored remarkably. The best nanolaminates showed charge storage factors improved up to 8 times when compared with those of the single oxide films. The presence of nanosize crystallites of monoclinic and metastable tetragonal HfO2 was observed by x-ray diffraction analysis.