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Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate

Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorApplied PhysicsAluminum Gallium NitrideGan Power DeviceHigh-resistivity Silicon SubstrateMicroelectronicsCategoryiii-v SemiconductorAlgan/gan High-electron-mobility Transistors