High-Energy Light Emission from Junctions in GaAs<i>x</i>P1−<i>x</i> Diodes

Abstract

Spontaneous and stimulated emission from junctions in diodes made of silicon-doped, melt-grown GaAsxP1−x alloys have been studied. Variations of the emission spectra as a function of current and of composition ranging up to 40 mole % GaP were examined both at room temperature and 77°K.