New Method for Soft-Error Mapping in Dynamic Random Access Memory Using Nuclear Microprobe

Abstract

Locally sensitive positions against soft error in a dynamic random access memory (DRAM) have, for the first time, been investigated using a proton microprobe. Both soft-error (bit-state) mapping and secondary electron mapping images of the investigated area could locally identify sensitive positions against soft error. Two kinds of error modes in a DRAM (i.e., cell mode and bit-line mode) could be directly monitored.