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Low‐Temperature Growth of β ‐ SiC on Si by Gas‐Source MBE
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1990
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EngineeringSi Solid SourceSemiconductor DeviceSemiconductorsCarbonization TemperatureMolecular Beam EpitaxyEpitaxial GrowthLow‐temperature GrowthMaterials EngineeringMaterials ScienceSemiconductor TechnologyCrystalline DefectsSemiconductor Device Fabricationβ ‐ SicElectronic MaterialsGas‐source MbeSurface ScienceApplied PhysicsSubstrate SurfaceChemical Vapor DepositionCarbide
Carbonization of Si (111) surface with molecular beam and subsequent molecular beam epitaxy of with gas source and Si solid source were studied for low‐temperature heteroepitaxy. Cracking molecules before they reach the substrate surface lowers the carbonization temperature down to 820°C. The RHEED pattern revealed that reconstruction of the carbonized layer occurred. The reconstructed RHEED pattern disappears when the substrate temperature is raised above 920°C and reappears when the temperature is lowered to 920°C. Single crystalline was grown on the carbonized layer homoepitaxially at 900°C with and Si molecules. The cross‐sectional TEM image of the grown layer reveals that the crystalline quality is nearly the same as that grown by conventional chemical vapor deposition at higher growth temperature. From the results, this growth technique is effective for low‐temperature heteroepitaxy of on Si.