Applied Physics Letters · 1997 · 91 citations · 14 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesLaser DiodesLaser PhysicsOptical SourcesQuantum DotsSemiconductor LasersBandwidthDifferential GainHigh-speed OperationModulation BandwidthMolecular Beam EpitaxyQuantum Dot LasersSingle-mode LasersWaveguide Lasers
We report small-signal modulation bandwidth and differential gain measurements of a single-layer self-organized In0.4Ga0.6As/GaAs quantum dot laser grown by molecular beam epitaxy. The 3 dB bandwidth of single-mode ridge waveguide lasers was measured to be 7.5 GHz at 100 mA under pulsed measurements, demonstrating the possibility of high speed operation of these devices. The differential gain was measured to be 1.7×10−14 cm2.
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