Dielectric characteristics of fluorinated ultradry SiO2

Abstract

Improvement of dielectric breakdown characteristics and hot-electron-induced interface degradation of metal-oxide-semiconductor capacitors having fluorinated ultradry oxides has been demonstrated. The fluorine is introduced through HF surface treatment of Si prior to oxidation. Secondary-ion mass spectrometry data indicate that SiF distribution is peaked both at the surface of the oxide and at the SiO2/Si interface in the fluorinated ultradry oxide. The possible role of fluorine on the improvement of the dielectric characteristics will be discussed.