Publication | Closed Access
Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3
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Citations
32
References
2013
Year
Materials EngineeringElectrical Engineering4H-sic Lateral MosfetsGate OxideEngineeringNanoelectronicsBias Temperature InstabilityApplied PhysicsPower Semiconductor DeviceMicroelectronicsComparative StudySemiconductor Device
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