Microwave Annealing of Very High Dose Aluminum-Implanted 4H-SiC

Abstract

A microwave heating technique has been used for the electrical activation of Al+ ions implanted in semi-insulating 4H-SiC. Annealing temperatures in the range of 2000–2100 °C and annealing time of 30 s have been used. The implanted Al concentration has been varied from 5×1019 to 8×1020 cm-3. A minimum resistivity of 2×10-2 Ω·cm and about 70% electrical activation of the implanted Al have been measured at room temperature for an implanted Al concentration of 8×1020 cm-3 and microwave annealing at 2100 °C for 30 s.