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Planar InGaAs/InP PINFET fabricated by Be ion implantation
13
Citations
2
References
1984
Year
EngineeringOptoelectronic DevicesPlanar Ingaas/inp PinfetSemiconductor DeviceSemiconductorsBe Ion ImplantationIon ImplantationElectronic PackagingStatic Optical ResponsePhotonicsElectrical EngineeringSemiconductor TechnologyPhysicsSemiconductor Device FabricationImplantable DeviceMicroelectronicsMicrofabricationApplied PhysicsPlanar Ingaas PinfetsOptoelectronics
Planar InGaAs PINFETs which provide the same heterostructure for both the PIN and the FET are proposed with the characteristics, p-type regions for PIN and FET are formed by Be ion implantation. Static optical response exhibits the total effective quantum efficiency of 400% at the wavelength of 1.55 μm.
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