Coherent Control of Stress-Induced InGaAs Quantum Dots by Means of Phonon-Assisted Resonant Photoluminescence

Abstract

We report the control of coherent status of the lowest energy electronic state of InGaAs/GaAs stress-induced quantum dots in an inhomogeneously broadened system by time-integrated detection of narrow Raman-like lines in resonant photoluminescence spectra. The dephasing time of 18.5 ps has been found at 2K.