Electronics Letters · 1969 · 80 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesTransport PhenomenaCarrier TransportDevice ModelingDevice SimulationElectronic Transport ModelingSemiconductor PhysicsTwo-dimensional SemiconductorsCarrier Mobility ModelingCarrier Transport ModelingField-effect Transistor SimulationNanodevice SimulationNumerical Device SimulationP-n Junction CharacteristicsSemiconductor Device ModelingTransport Equations
A numerical iterative scheme is presented for the solution of the 1- and 2-dimensional semiconductor d.c. transport equations. This scheme is applied to an n-p-n transistor structure. Input data are geometry, doping profile, boundary conditions and, optionally, mobility dependencies and generation-recombination law.