Journal of Applied Physics · 1998 · 22 citations · 13 references
EngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductorsIi-vi SemiconductorQuantum MaterialsLocal Interface CompositionMolecular Beam EpitaxyCompound SemiconductorMaterials ScienceOxide HeterostructuresPhysicsSemiconductor MaterialInterface TerminationPseudomorphic Bete/znsePhotoelectron SpectroscopyApplied PhysicsCondensed Matter PhysicsMultilayer HeterostructuresTopological Heterostructures
Using photoelectron spectroscopy, we have investigated the band alignment at the interface of pseudomorphic BeTe/ZnSe(100) heterojunctions for different interface terminations. The heterostructures of high structural quality have been produced by molecular beam epitaxy; the interface termination was adjusted by variation of the growth parameters between the growth process of ZnSe and BeTe. The valence band offset for a Zn-rich BeTe/ZnSe interface is determined to be 1.26±0.15 eV, for the Se-rich BeTe/ZnSe interface a value of 0.46±0.15 eV is obtained. Our results show that the band alignment can be modified by the interface composition even for isovalent heterostructures.
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