Enhancement in ultraviolet optoelectronic performance of photoconductive semiconductor switch based on ZnO nanobelts film

Abstract

Photoconductive semiconductor switches (PCSSs) based on ZnO nanobelts film and ZnO thin film were fabricated and applied into a test circuit to control the circuit state. The photosensitivity, leakage current from I-V characteristics, and the “on-off” voltage ratio from voltage spectrums of the former are 102 times higher, ten times lower, and two times higher than that of the latter, respectively. It indicates that PCSS based on ZnO nanobelts film has larger photoresponse, better “off state,” and more effective switching function, and they are regarded as consequences of longer transport path and higher surface to volume ratio according to oxygen chemisorption mechanism.